| PART |
Description |
Maker |
| MBM29LV400B-10 MBM29LV400B-12 MBM29LV400T-10 MBM29 |
CMOS 4M (512K ×8/256K×16) Falsh Memory(512K ×8/256K×16V 电源电压闪速存储器)
|
Fujitsu Limited
|
| AT27BV400-15TI AT27BV400 AT27BV400-12JC AT27BV400- |
High Speed CMOS Logic 8-Stage Synchronous Down Counters 16-SOIC -55 to 125 256K X 16 OTPROM, 120 ns, PDSO48
4-Megabit 256K x 16 or 512K x 8 Unregulated Battery-Voltage High Speed OTP EPROM 256K X 16 OTPROM, 150 ns, PDSO48
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| A29002V-100 A29002-70 A29002L-70 A29002V-70 A29002 |
110ns 20mA 256K x 8bit CMOS 5.0V-only
70ns 20mA 256K x 8bit CMOS 5.0V-only
100ns 20mA 256K x 8bit CMOS 5.0V-only
120ns 20mA 256K x 8bit CMOS 5.0V-only
150ns 20mA 256K x 8bit CMOS 5.0V-only
90ns 20mA 256K x 8bit CMOS 5.0V-only
55ns 20mA 256K x 8bit CMOS 5.0V-only
|
AMIC Technology
|
| CY7C1355C-117BGC CY7C1355C-117BGI CY7C1355C-117BZC |
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7.5 ns, PBGA165
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 9兆位56 × 36/512K × 18）流体系结构，通过与总线延迟静态存储器
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| BM29F400B BM29F400T 29F400T-12PC 29F400T-12PI 29F4 |
4 MEGABIT (512K x 8 ) 5 VOLT SECTOR ERASE CMOS FLASH MEMORY(5V电源4M512K x 8 )扇区可擦除CMOS闪速存储器) 4兆位（为512k × 8伏扇区擦除的CMOS闪存V的电源的4分位（为512k × 8）扇区可擦除的CMOS闪速存储器
4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
|
Winbond Electronics, Corp.
List of Unclassifed Manufacturers
|
| MX27C4096 27C4100 |
4M-BIT [512K x 8/256K x 16] CMOS EPROM
From old datasheet system
|
Macronix 旺宏
|
| A67P9318E-4.2F A67P8336 A67P8336E A67P8336E-2.6 A6 |
DIODE ZENER SINGLE 500mW 5.6Vz 20mA-Izt 0.05 5uA-Ir 3Vr DO35-GLASS 5K/AMMO
512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM 12k × 1856 × 36 LVTTL，流水线ZeBL的SRAM
GIGABASE 350 CAT5E PATCH 5 FT, SNAGLESS, WHITE 12k × 1856 × 36 LVTTL，流水线ZeBL的SRAM
512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM 512k × 1856 × 36 LVTTL，流水线ZeBL的SRAM
512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM 12k × 18256 × 36 LVTTL，流水线ZeBL的SRAM
|
AMICC[AMIC Technology]
AMIC Technology Corporation
AMIC Technology, Corp.
|
| A28F400BR-TB A28F400BR-B AB28F400BR-T80 AB28F400BR |
4-MBIT (256K X 16/ 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
4-MBIT (256K X 16, 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
Toggle Switch; Circuitry:DPDT; Switch Operation:On-On; Contact Current Max:6A; Actuator Style:Bat; Switch Terminals:Through Hole; Current Rating:3A; Leaded Process Compatible:Yes; Mounting Type:PCB; Features:Standard Actuator RoHS Compliant: Yes
4-MBIT (256K X 16. 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
4-Mbit (256K x 16, 512K x 8) SmartVoltage boot block flash memory. Access speed 80 ns
|
Intel Corporation
Intel Corp.
|
| TC58FVT400FT-10 TC58FVT400FT TC58FVB400 TC58FVT400 |
4-MBIT (512K * 8 BITS / 256K * 16BITS)CMOS FLASH MEMORY
|
TOSHIBA[Toshiba Semiconductor]
|
| MX29LV401BTI-70 MX29LV401BTI-90 MX29LV401T MX29LV4 |
4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
|
MCNIX[Macronix International]
|
| AS29LV400T-90TI |
3V 512K x 8/256K x 16 CMOS flash EEPROM, 90ns access time
|
Alliance Semiconductor
|
